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| inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor 2SD960 description c ollector-emitter breakdown voltage- : v (br)ceo = 80v(min) low collector-emitter saturation voltage- : v ce(sat) = 0.5v(max) @i c = 3a complement to type 2sb868 applications designed for power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 130 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 7 v i c collector current-continuous 4 a i cm collector current-peak 8 a p c collector power dissipation @ t c =25 35 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2SD960 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 80 v v ce (sat) collector-emitter satu ration voltage i c = 3.0a; i b = 0.15a 0.5 v v be (sat) base-emitter satura tion voltage i c = 3.0a; i b = 0.15a 1.5 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 50 a h fe-1 dc current gain i c = 0.1a; v ce = 2v 45 h fe-2 dc current gain i c = 1a; v ce = 2v 60 260 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 30 mhz switching times t on turn-on time i c = 1a, i b1 = -i b2 = 0.1a 0.5 s t stg storage time 2.5 s t f fall time 0.15 s ? h fe-2 classifications r q p 60-120 90-180 130-260 |
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